Deposition of Ga2O3 thin films by liquid metal target sputtering

‍Reference:

Zubkins, M., Vibornijs, V., Strods, E., Butanovs, E., Bikse, L., Ottosson, M., Hallén, A., Gabrusenoks, J., Purans, J. and Azens, A., 2023. Deposition of Ga2O3 thin films by liquid metal target sputtering. Vacuum, 209, p.111789.

PI-KEM Product referenced:

Sputter Targets

Abstract:

Biodegradable and edible electronics will need electronic components for signal modulation and wireless communication; hence, non-linear and high frequency components will be required. Here, a method to fabricate nanodiodes on isomalt (a sugar substitute) substrates is reported. Coplanar electrodes of Al and Au with nanogap separation were fabricated on top of isomalt through design of an adhesion lithography process specifically to accommodate the low melting point and high solubility of the substrate. Lateral diodes with rectification ratios of 103 were created by depositing indium gallium zinc oxide (IGZO) using a target with an atomic ratio of In2O3:Ga2O3:ZnO (1:1:1) on top of the electrodes without an annealing step.

Keywords

Substrates, Deposition, Gold, Metals, Nanoscale devices, Nano electronics, Biodegradable devices, Electrodes, Lithography, Annealing

Authors:

Martins Zubkins a, Viktors Vibornijs a, Edvards Strods a, Edgars Butanovs a, Liga Bikse a, Mikael Ottosson b, Anders Hallén c, Jevgenijs Gabrusenoks d, Juris Purans a, Andris Azens d

Organisation / Department Address:

a Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063, Riga, Latvia

b Department of Chemistry, Ångström Laboratory, Lägerhyddsvägen 1, SE 75120, Uppsala, Sweden

c KTH Royal Institute of Technology, School of EECS, P.O. Box Electrum 229, SE 16440, Kista-Stockholm, Sweden

d AGL Technologies SIA, Smerla 3, LV-1006, Riga, Latvia