Graphene

Downloadable tech sheet available below 

The versatility of easy transfer graphene on polymer allows it to be easily transferred onto a substrate avoiding the use of hazardous chemicals and avoiding metal etching. 

The graphene is transferred in 3 steps:

Advantages

• Monolayer graphene film ready to be deposited
• Easy integration for special substrates and simplifies processing method
• Avoids metal etching
• Avoids hazardous chemical handling
• Manipulation of thin film done at Graphenea
• Bottom layer removed

Properties

• Monolayer, grown by CVD
• Transparency >97%
• Coverage > 95%
• Grain size: Up to 10μm
• Thickness (theoretical): 0.345 nm
• FET Electron Mobility on Al2O3: 2000 cm2/Vs
• FET Electron Mobility on SiO₂/Si: 4000 cm2/Vs
• Sheet Resistance on SiO₂/Si: 450±40 Ohms/sq (1cm x1cm)
• Available as standard 1cm x 1cm or 1 inch x 1 inch.  Other sizes available for custom order

Downloadable tech sheet available below

Graphene produced using chemical vapour deposition (CVD) methods is high purity, high quality and can be applied to a wide range of substrates.

‍Advantages

• Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity
• Quality control: Raman Spectroscopy: I(G)/I(2D) <0.7; I(D)/I(G)<0.05
• Available in single, bilayer, trilayer, and multilayers

‍Properties

• Appearance (colour): Transparent
• Coating: PMMA
• Excellent coverage and continuity (min 95 %)
• Grain size: Up to 10μm
• Stable negative thermal coefficient of electroconductivity
• Stable mechanical and physical properties under thermal fatigue conditions

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‍Standard substrate materials:

• SiO₂/Si
• Cu
• TEM Grids
• PET
• Quartz

Custom manufacture available for customer specified substrates

Downloadable tech sheet available below

Graphite is chemically processed to obtain monolayer flakes of graphene oxide.

‍Advantages

• Odourless
• Water soluble
• Quality controlled to limit residue on evaporation

Properties

• Dispersion of graphene oxide sheets
• Sheet dimension:  customisable
• Monolayer content (measured in 0.5 mg/mL): >95%
• Elemental analysis available

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Other forms of Graphene Oxide available as:

• Reduced Graphene Oxide rGO
• Graphene Oxide Film
• Graphene Oxide Dispersion

Downloadable tech sheet available below

Provided by Gnanomat

PI-KEM can offer a range of hybrid nanocomposites made up of graphene and other carbon materials with nanoparticles and additives of different source for industrial applications, through our partners at Gnanomat.

Gnanomat designs, develops, and manufactures engineered graphene-based nanomaterials to address different industrial applications. Nanomaterials can be used in potential applications including energy storage, inks on textiles for highly conductive wearable electronics, electrochemical sensors, catalytic and antibacterial activity, and detection of heavy metal ions.

Formats:

• Graphene – Manganese Oxide Nanoparticles
• Graphene – Zinc Oxide Nanoparticles
• Graphene – Silver Nanoparticles

Downloadable tech sheet available below

PI-KEM offer a range of specialist graphene devices and services. High quality wafer-scale graphene and the ability to integrate graphene devices with existing technological processes are for implementing graphene based photonics. G-FET & G-FAB products and services are available to assist these innovations.

G-FET Devices for Sensing Applications

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‍mGET

• These graphene devices are fully packaged and tested, ready to be plugged
• Available in: mGFET-4D / mGFET-4P

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‍GFET S1X

• These designs are optimised for micro- and nanoelectronic applications, spintronics, gas, and magnetic field sensing. Various device geometries available:
• Hall bars (S10)
• Van der Pauw (S11)
• Interdigitated contacts (S12)

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‍GFET S2X

• These designs are optimised for sensing in liquid environments, specially relevant in biosensing applications.
• Available in: GFET-S20 / GFET-S21 / GFET-S22 GFET-S20P / GFET-S21P / GFET-S22P

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GFET S3X

• These designs leverage a HKMG process to create local gates. This enables individual control of each device with low-power operation due to EOTs down to 5nm.
• Available in: GFET-S30 / GFET-S31

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MPW (Multiproject Wafer Runs)

MPW enable cheap & easy prototyping for custom devices from ultra low volumes. Through its mask-sharing scheme, custom devices in small batches are now available at affordable costs. Sharing the cost of fabrication allows to lower the entry barrier for researchers and companies interested in developing graphene-based technologies, offering a reduced turnaround time compared to conventional MPW runs of just 3 months.

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The Graphene Foundry, or G-FAB service provides customers with the ability to order completely bespoke graphene circuits printed to their own specifications. This service creates a huge opportunity for researchers to obtain the materials they need, enabling fast device prototyping and accelerating the development of new applications, with no minimum batch size.

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• Wafers up to 6" diameter for fast device prototyping
• Ni/Al edge contacts
• Minimum feature 5µm, mask alignment accuracy ±3µm

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